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A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic to the current–voltage relationship of a tunneling diode is the presence of one or more negative differential resistance regions, which enables many unique applications. Tunneling diodes can be very compact and are also capable of ultra-high-speed operation because the quantum tunneling effect through the very thin layers is a very fast process. One area of active research is directed toward building oscillators and switching devices that can operate at terahertz frequencies. ==Introduction== An RTD can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductor) and different types of resonant tunneling structures, such as the heavily doped p–n junction in Esaki diodes, double barrier, triple barrier, quantum well, or quantum wire. The structure and fabrication process of Si/SiGe resonant interband tunneling diodes are suitable for integration with modern Si complementary metal–oxide–semiconductor (CMOS) and Si/SiGe heterojunction bipolar technology. One type of RTDs is formed as a single quantum well structure surrounded by very thin layer barriers. This structure is called a double barrier structure. Carriers such as electrons and holes can only have discrete energy values inside the quantum well. When a voltage is placed across an RTD, a terahertz wave is emitted, which is why the energy value inside the quantum well is equal to that of the emitter side. As voltage is increased, the terahertz wave dies out because the energy value in the quantum well is outside the emitter side energy. Another feature seen in RTD structures is the negative resistance on application of bias as can be seen in the image generated from Nanohub. This structure can be grown by molecular beam heteroepitaxy. GaAs and AlAs in particular are used to form this structure. AlAs/InGaAs or InAlAs/InGaAs can be used. The operation of electronic circuits containing RTDs can be described by a Liénard system of equations, which are a generalization of the Van der Pol oscillator equation. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Resonant-tunneling diode」の詳細全文を読む スポンサード リンク
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